SiN/SiO2 passivation stack of n-type silicon surface

Al2O3/TiO2 stack layers for effective surface passivation of crystalline silicon

Surface passivation of black silicon phosphorus emitters

ii Abstract (in Finnish) iiiin Finnish) iii

Surface Passivation Study on Gettered Multicrystalline Silicon

In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detect...

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

Efficiencies of large area n-type silicon solar cells with a screen printed rear side aluminum-alloyed emitter are mainly limited by their front surface recombination velocity. The front surface therefore has to be passivated by an effective passivation layer combined with a front surface field (FSF). In this work we investigate the influence of the front surface passivation quality and the bas...